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| SCTMU001F Datasheet, PDF (2/10 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCTMU001F
ï¬Thermal resistance
Parameter
Thermal resistance, junction - case
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
Tsold
Values
Unit
Min. Typ. Max.
-
0.72 0.95 ï°C/W
-
-
265 ï°C
ï¬Electrical characteristics (Ta = 25ï°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
400
-
-
V
Zero gate voltage
drain current
VDS = 400V, VGS = 0V
IDSS Tj = 25ï°C
-
Tj = 150°C
-
Gate - Source leakage current
IGSS+ VGS = +22V, VDS = 0V
-
Gate - Source leakage current
IGSS- VGS = -6V, VDS = 0V
-
Gate threshold voltage
VGS (th) VDS = VGS, ID = 3.3mA
1.6
Static drain - source
on - state resistance
VGS = 18V, ID = 10A
RDS(on) *3 Tj = 25ï°C
-
Tj = 100°C
-
Gate input resistance
RG f = 1MHz, open drain
-
0.1
1
ïA
0.5
-
-
100 nA
-
-100 nA
-
4.0
V
120 156 mï
137
-
14
-
ï
*1 Limited only by maximum temperature allowed.
*2 PW ï£ 10ïs, Duty cycle ï£ 1%
*3 Pulsed
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/9
2013.12 - Rev.A
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