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SCS306AP Datasheet, PDF (2/7 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS306AP
Datasheet
ï¬Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
DC blocking voltage
VDC IR =50ïA
IF=6A, Tj=25°C
650
-
-
V
-
1.35 1.50
V
Forward voltage
VF IF=6A, Tj=150°C
-
1.44 1.71
V
IF=6A, Tj=175°C
VR=650V, Tj=25°C
-
1.50
-
V
- 0.018 30
ïA
Reverse current
IR
VR=650V, Tj=150°C
-
1.2 120 ïA
VR=650V, Tj=175°C
-
3.6
-
ïA
Total capacitance
VR=1V, f=1MHz
C
VR=650V, f=1MHz
-
300
-
pF
-
27
-
pF
Total capacitive charge
Switching time
QC VR=400V, di/dt=350A/ïs -
19
-
nC
tC
VR=400V, di/dt=350A/ïs -
15
-
ns
Non-repetetive
Avaranche Energy
Eava L=1mH
-
71
-
mJ
ï¬Thermal characteristics
Parameter
Thermal resistance
Symbol
Rth(j-c)
Conditions
-
Values
Unit
Min. Typ. Max.
-
2.2 3.2 °C/W
ï¬Typical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1
3.09E-02
Rth2
3.09E-01
K/W
Rth3
1.83E+00
Symbol
Cth1
Cth2
Cth3
Value
1.81E-04
6.65E-04
1.58E-03
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
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2/5
2017.07 - Rev.D
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