SCS215KGHR_17 Datasheet, PDF (2/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS215KGHR
Datasheet
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
DC blocking voltage
V_DC I_R =0.3mA
1200
-
-
V
I_F=15A,Tj=25°C
-
1.4 1.6
V
Forward voltage
V_F I_F=15A,Tj=150°C
-
1.8
-
V
I_F=15A,Tj=175°C
-
1.9
-
V
V_R=1200V,Tj=25°C
-
15 300 A
Reverse current
I_R V_R=1200V,Tj=150°C
-
120
-
A
V_R=1200V,Tj=175°C
-
195
-
A
Total capacitance
V_R=1V,f=1MHz
C
V_R=800V,f=1MHz
-
790
-
pF
-
63
-
pF
Total capacitive charge
Qc V_R=800V,di/dt=500A/s -
51
-
nC
Switching time
tc
V_R=800V,di/dt=500A/s -
18
-
ns
Thermal characteristics
Parameter
Thermal resistance
Symbol
R_th(j-c)
Conditions
-
Values
Min. Typ. Max.
-
0.67 0.8
Unit
°C/W
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2017.06 - Rev.C