S2305 Datasheet, PDF (2/12 Pages) Rohm – N-channel SiC power MOSFET bare die

S2305
Data Sheet
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
1200
-
-
V
Zero gate voltage
drain current
V_DS = 1200V, V_GS = 0V
I_DSS T_j = 25°C
-
T_j = 150°C
-
Gate - Source leakage current
I_GSS+ V_GS = +22V, V_DS = 0V
-
Gate - Source leakage current
I_GSS- V_GS = -6V, V_DS = 0V
-
Gate threshold voltage
V_{GS (th)} V_DS = V_GS, I_D = 0.9mA
1.6
Static drain - source
on - state resistance
V_GS = 18V, I_D = 3A
R_DS(on) ^{*3 T}_j ^{= 25°C}
-
T_j = 125°C
-
Gate input resistance
R_G f = 1MHz, open drain
-
1
10
mA
2
-
-
100 nA
-
-100 nA
-
4.0
V
450 556 mW
610
-
25
-
W
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2014.05 - Rev.A