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RZR025P01TL Datasheet, PDF (2/6 Pages) Rohm – 1.5V Drive Pch MOSFET | |||
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
â
â ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS â12 â
â
V ID= â1mA, VGS=0V
Zero gate voltage drain current IDSS
â
â
â1 µA VDS= â12V, VGS=0V
Gate threshold voltage
VGS (th) â0.3 â â1.0 V VDS= â6V, ID= â1mA
â
44 61 m⦠ID= â2.5A, VGS= â4.5V
Static drain-source on-state
resistance
RDS (on)â
â
â
60 84 m⦠ID= â1.2A, VGS= â2.5V
81 121 m⦠ID= â1.2A, VGS= â1.8V
Forward transfer admittance
â 110 220 m⦠ID= â0.5A, VGS= â1.5V
Yfs â 3.5
â
â
S VDS= â6V, ID= â2.5A
Input capacitance
Ciss
â 1350 â
pF VDS= â6V
Output capacitance
Coss
â 130 â
pF VGS=0V
Reverse transfer capacitance Crss
â 125 â
Turn-on delay time
td (on) â â
9
â
Rise time
tr â â
35
â
Turn-off delay time
td (off) â â
130
â
Fall time
tf â â
85
â
Total gate charge
Qg â â
13
â
Gate-source charge
Qgs â â
2.5
â
Gate-drain charge
Qgd â â
2.0
â
pF f=1MHz
ns ID= â1.2A
ns VDD â6V
VGS= â4.5V
ns RL=5â¦
ns RG=10â¦
nC VDD â6V, ID= â2.5A
nC VGS= â4.5V
nC RL 2.4â¦, RG=10â¦
âPulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter
Forward voltage
â Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD â â
â â1.2 V IS= â2.5A, VGS=0V
RZR025P01
2/5
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