RZR025P01 Datasheet, PDF (2/6 Pages) Rohm – 1.5V Drive Pch MOSFET

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
−
44 61 mΩ ID= −2.5A, VGS= −4.5V
Static drain-source on-state
resistance
RDS (on)^∗
−
−
60 84 mΩ ID= −1.2A, VGS= −2.5V
81 121 mΩ ID= −1.2A, VGS= −1.8V
Forward transfer admittance
− 110 220 mΩ ID= −0.5A, VGS= −1.5V
Yfs ^∗ 3.5
−
−
S VDS= −6V, ID= −2.5A
Input capacitance
Ciss
− 1350 −
pF VDS= −6V
Output capacitance
Coss
− 130 −
pF VGS=0V
Reverse transfer capacitance Crss
− 125 −
Turn-on delay time
td (on) ^∗ _−
9
−
Rise time
tr ^∗ _−
35
−
Turn-off delay time
td (off) ^∗ _−
130
−
Fall time
tf ^∗ _−
85
−
Total gate charge
Qg ^∗ −
13
−
Gate-source charge
Qgs ^∗ −
2.5
−
Gate-drain charge
Qgd ^∗ −
2.0
−
pF f=1MHz
ns ID= −1.2A
ns ^{VDD −6V}
VGS= −4.5V
ns _RL=5Ω
ns RG=10Ω
nC VDD −6V, ID= −2.5A
nC VGS= −4.5V
nC RL 2.4Ω, RG=10Ω
∗Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗ −
− −1.2 V IS= −2.5A, VGS=0V
RZR025P01
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