RZR020P01TL Datasheet, PDF (2/5 Pages) Rohm – 1.5V Drive Pch MOSFET

RZR020P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
−
75 105 mΩ ID= −2A, VGS= −4.5V
Static drain-source on-state
resistance
RDS (on)^{∗ −}
−
105 145 mΩ ID= −1A, VGS= −2.5V
150 225 mΩ ID= −1A, VGS= −1.8V
Forward transfer admittance
−
Yfs ^∗ 2
200 400 mΩ ID= −0.4A, VGS= −1.5V
−
−
S VDS= −6V, ID= −2A
Input capacitance
Ciss
− 770 −
pF VDS= −6V
Output capacitance
Coss
−
75
−
pF VGS=0V
Reverse transfer capacitance Crss
− 60 − pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) ^∗ _−
10
−
ns VDD −6V
tr ^∗ _−
17
−
ns ^{ID= −1A}
td (off) ^∗ _−
65
−
VGS= −4.5V
ns _{RL 6Ω}
tf ^∗ _−
35
−
ns RG=10Ω
Total gate charge
Qg ^∗ −
6.5
−
nC VDD −6V, ID= −2A
Gate-source charge
Qgs ^∗ −
1.3
−
nC VGS= −4.5V
Gate-drain charge
Qgd ^∗ −
0.8
−
nC RL 3Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗ −
− −1.2 V IS= −2A, VGS=0V
Data Sheet
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2009.03 - Rev.A