RZM002P02 Datasheet, PDF (2/5 Pages) Rohm – 1.2V Drive Pch MOSFET

RZM002P02
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −10V, ID= −100uA
− 0.8 1.2 Ω ID= −200mA, VGS= −4.5V
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
1.0 1.5
1.3 2.2
1.6 3.5
Ω ID= −100mA, VGS= −2.5V
Ω ID= −100mA, VGS= −1.8V
Ω ID= −40mA, VGS= −1.5V
− 2.4 9.6 Ω ID= −10mA, VGS= −1.2V
Forward transfer admittance Yfs ^∗ 0.2 −
−
S VDS= −10V, ID= −200mA
Input capacitance
Ciss
− 115 −
pF VDS= −10V
Output capacitance
Coss
−
10
−
pF VGS= 0V
Reverse transfer capacitance Crss
−
6
− pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
td (on) ^∗ −
6
−
ns VDD −10V
tr ^∗ −
td (off) ^∗ −
4
17
−
−
ns ^{ID= −100mA}
VGS= −4.5V
ns _{RL 100Ω}
Fall time
tf ^∗ −
17
−
ns RG= 10Ω
Total gate charge
Qg ^∗ −
1.4
−
nC _{VDD −10V, ID= −200mA}
Gate-source charge
Qgs ^∗ −
0.3
−
nC VGS= −4.5V
Gate-drain charge
Qgd ^∗ −
0.3
−
nC RL 50Ω, RG= 10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
− −1.2 V IS= −200mA, VGS=0V
Data Sheet
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2009.06 - Rev.B