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| RXQ040N03 Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Nch MOSFET | |||
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RXQ040N03
ï¬ Electrical characteristics (Ta = 25ï°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on) *
tr *
td(off) *
tf *
Qg *
Qgs *
Qgd *
Min.
-
30
-
1.0
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
ã
Typ.
-
-
-
-
35
45
50
-
180
70
35
10
28
24
7
3.3
1.0
1.0
Max.
ï±10
-
1
2.5
50
65
70
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
ïA VGS=ï±20V, VDS=0V
V ID=1mA, VGS=0V
ïA VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=4.0A, VGS=10V
mï ID=4.0A, VGS=4.5V
ID=4.0A, VGS=4.0V
S ID=4.0A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.0A, VDD 15V
ns VGS=10V
ns RL=7.5ï
ns RG=10ï
nC ID=4.0A
nC VDD 15V
nC VGS=5V
ï¬Body diode characteristics (Source-Drain) (Ta = 25ï°C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=4.0A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.05 - Rev.A
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