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RXH125N03 Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Nch MOSFET
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RXH125N03
 Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V(BR)DSS 30
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
VGS (th)
1.0
Static drain-source on-state
resistance
-
RDS
*
(on)
-
-
Forward transfer admittance
l Yfs l*
9.0
Input capacitance
Ciss
-
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
-
Turn-on delay time
td(on)*
-
Rise time
tr *
-
Turn-off delay time
td(off)*
-
Fall time
tf *
-
Total gate charge
Qg *
-
Gate-source charge
Qgs *
-
Gate-drain charge
Qgd *
-
*Pulsed
　
Typ.
-
-
-
-
7.5
9.5
10.0
-
1000
340
170
12
20
55
18
12.7
2.6
6.0
Max.
10
-
1
2.5
12.0
13.3
14.0
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=12.5A, VGS=10V
m ID=12.5A, VGS=4.5V
ID=12.5A, VGS=4.0V
S ID=12.5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=6.3A, VDD 15V
ns VGS=10V
ns RL=2.38
ns RG=10
nC ID=12.5A, VDD 15V
nC VGS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=12.5A, VGS=0V
Data Sheet
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2/6
2011.03 - Rev.A
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