RW1A030AP Datasheet, PDF (2/7 Pages) Rohm – 1.5V Drive Pch MOSFET

RW1A030AP
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
I_GSS
V_(BR)DSS
I_DSS
V_{GS (th)}
Static drain-source on-state
resistance
R_DS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Y_fs l*
C_iss
C_oss
C_rss
t_d(on)*
t_{r *}
t_d(off)*
t_f *
Q_g *
Q_gs *
Q_{gd *}
Min.
-
12
-
0.3
-
-
-
-
3.8
-
-
-
-
-
-
-
-
-
-
　
Typ.
-
-
-
-
30
40
55
75
-
2700
170
150
10
30
240
75
22
3.9
3.1
Max.
10
-
10
1.0
42
56
82
150
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=8V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=12V, V_GS=0V
V V_DS=6V, I_D=1mA
I_D=3A, V_GS=4.5V
m ^{ID=1.5A, VGS=2.5V}
I_D=1.5A, V_GS=1.8V
I_D=0.6A, V_GS=1.5V
S I_D=3A, V_DS=6V
pF V_DS=6V
pF V_GS=0V
pF f=1MHz
ns I_D=1.5A, V_DD 6V
ns V_GS=4.5V
ns R_L=4
ns R_G=10
nC I_D=3A
nC V_DD 6V
nC V_GS=4.5V
Data Sheet
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol Min.
V_SD *
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2
V I_s=3A, V_GS=0V
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2011.03 - Rev.A