RUL035N02FRA Datasheet, PDF (2/14 Pages) Rohm – Nch 20V 3.5A Power MOSFET

RUL035N02FRA
zThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
R_thJA ^*3
R_thJA ^*4
Values
Unit
Min. Typ. Max.
-
-
125 °C/W
-
-
391 °C/W
zElectrical characteristics(T_a = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
Values
Unit
Min. Typ. Max.
20
-
-
V
Breakdown voltage
temperature coefficient
ΔV_(BR)DSS I_D=1mA
ΔT_j referenced to 25°C
-
Zero gate voltage drain current
I_DSS V_DS = 20V, V_GS = 0V
-
Gate - Source leakage current
I_GSS V_GS = r10V, V_DS = 0V
-
Gate threshold voltage
V_{GS (th)} V_DS = 10V, I_D = 1mA
0.3
Gate threshold voltage
temperature coefficient
ΔV_(GS)th I_D=1mA
ΔT_j referenced to 25°C
-
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
V_GS=4.5V, I_D=3.5A
-
V_GS=2.5V, I_D=3.5A
-
R_DS(on) ^{*5 V}_GS^{=1.8V, I}_D^=1.8A
-
V_GS=1.5V, I_D=0.7A
-
V_GS=4.5V, I_D=3.5A, T_j=125°C
-
R_G f = 1MHz, open drain
-
g_fs ^{*5 V}_DS^{=10V, I}_D^=3.5A
3.2
*1 Limited only by maximum temperature allowed.
*2 Pw d 10Ps, Duty cycle d 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
20
-
-
-
1.9
31
38
50
66
56
7.5
8.5
- mV/°C
1
PA
r10 PA
1.0
V
- mV/°C
43
53
70 m:
93
80
-
:
-
S
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