RSX301L-30_1 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RSX301L-30
zElectrical characteristic curves (Ta=25°C)
10
Ta=75℃
Ta=125℃
1 _Ta=150℃
0.1
Ta=25℃
Ta=-25℃
1000000
100000
10000
1000
100
0.01
10
0.001
1
0 100 200 300 400 500 600
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
1000
Ta=25℃
IF=3A
900
390
n=30pcs
800
700
850
Ta=25℃
840
VR=30V
n=30pcs
830
820
Ta=25℃
f=1MHz
VR=0V
n=10pcs
380
600
810
500
800
370
400
790
300
AVE:66.90uA
780
360
200
AVE:379.8mV
100
770
AVE:800.8pF
760
350
0
750
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
200
150
100
50
0
300
250
200
150
100
50
0
1
30
Ifsm
1cyc
25
8.3ms
AVE:178.0A
20
15
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
10
AVE:11.8ns
5
IFSM DISPERSION MAP
0
trr DISPERSION MAP
Ifs
t
1000 ^{Mounted on epoxy board}
IM=100mA
IF=1A
100
1ms ^time
300us
10
Rth(j-a)
Rth(j-c)
1
300
250
Ifsm
200
8.3ms 8.3ms
1cyc
150
100
50
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
3
2
D=1/2
DC
Sin(θ＝180)
1
0.1
0
10
100
0.001 0.01 0.1 1 10 100 1000
0
1
2
3
4
5
TIME:t(ms)
TIME:t(s)
AVERAGE RECTIFIED
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.D
2/3