RSS130N03 Datasheet, PDF (2/4 Pages) Rohm – Switching (30V, 13A)

Transistors
RSS130N03
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Source Leakage
IGSS
−
−
10
µA VGS=20V, VDS=0V
Drain-Source Breakdown Voltage V (BR)DSS 30
−
−
V ID=1mA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
−
−
1
µA VDS=30V, VGS=0V
Gate Threshold Voltage
VGS (th) 1.0
−
2.5
V VDS=10V, ID=1mA
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
−
RDS
∗
(on)
−
−
l Yfs l ^∗ 11
5.9 8.1
ID=13A, VGS=10V
7.4 10.3 mΩ ID=13A, VGS=4.5V
7.9 11.0
ID=13A, VGS=4V
−
−
S ID=13A, VDS=10V
Input Capacitance
Ciss
− 2000 −
pF VDS=10V
Output Capacitance
Coss
− 605 −
pF VGS=0V
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
∗Pulsed
Crss
−
td(on) ^∗
−
tr ^∗ −
td(off) ^∗
−
tf ^∗ −
Qg ^∗ −
Qgs ^∗ −
Qgd ^∗ −
320 −
13
−
30
−
88
−
55
−
25 35
4.7
−
9.4
−
pF f=1MHz
ns ID=6.5A, VDD 15V
ns VGS=10V
ns RL=2.31Ω
ns RGS=10Ω
nC VDD=15V
nC VGS=5V
nC ID=13A
zBody diode characteristics (Source-Drain Characteristics) (Ta = 25°C)
Parameter
Forward Voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Test Conditions
VSD ^∗
−
−
1.2
V Is=6.4A, VGS=0V
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