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| RSF010P05 Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Pch MOSFET | |||
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RSF010P05
ï¬ Electrical characteristics (Ta = 25ï°C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS (on*)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
ï45
-
ï1.0
-
-
-
1
-
-
-
-
-
-
-
-
-
-
ã
Typ.
-
-
-
-
330
450
490
-
160
40
17
6
4
18
6
2.3
0.9
0.6
Max.
ï±10
-
ï1
ï2.5
460
630
690
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
ïA VGS=ï±20V, VDS=0V
V ID=ï1mA, VGS=0V
ïA VDS=ï45V, VGS=0V
V VDS=ï10V, ID=ï1mA
ID=ï1A, VGS=ï10V
mï ID=ï0.5A, VGS=ï4.5V
ID=ï0.5A, VGS=ï4V
S ID=ï1A, VDS=ï10V
pF VDS=ï10V
pF VGS=0V
pF f=1MHz
ns ID=ï0.5A, VDD ï25V
ns VGS=ï10V
ns RL=50ï
ns RG=10ï
nC ID=ï1A
nC VDD ï25V
nC VGS=ï5V
Data Sheet
ï¬Body diode characteristics (Source-Drain) (Ta = 25ï°C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
ï1.2
V Is=ï1A, VGS=0V
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.03 - Rev.A
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