RSD175N10 Datasheet, PDF(2/7 Page) Rohm – 4V Drive Nch MOSFET

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RSD175N10 Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Nch MOSFET

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RSD175N10

ï¬ Electrical characteristics (Ta = 25ï°C)

Parameter

Symbol Min.

Gate-source leakage

IGSS

-

Drain-source breakdown voltage V(BR)DSS 100

Zero gate voltage drain current

IDSS

-

Gate threshold voltage

VGS (th)

1

Static drain-source on-state

resistance

-

RDS

*

(on)

-

-

Forward transfer admittance

l Yfs l*

5

Input capacitance

Ciss

-

Output capacitance

Coss

-

Reverse transfer capacitance

Crss

-

Turn-on delay time

td(on)*

-

Rise time

tr *

-

Turn-off delay time

td(off)*

-

Fall time

tf *

-

Total gate charge

Qg *

-

Gate-source charge

Qgs *

-

Gate-drain charge

Qgd *

-

*Pulsed

ã

Typ.

-

-

-

-

75

80

85

-

950

85

55

10

25

60

50

24

3

6

Max.

ï±10

-

1

2.5

105

112

119

-

-

-

-

-

-

-

-

-

-

-

Unit

Conditions

ïA VGS=ï±20V, VDS=0V

V ID=1mA, VGS=0V

ïA VDS=100V, VGS=0V

V VDS=10V, ID=1mA

ID=8.8A, VGS=10V

mï ID=8.8A, VGS=4.5V

ID=8.8A, VGS=4V

S VDS=10V, ID=8.8A

pF VDS=25V

pF VGS=0V

pF f=1MHz

ns VDD 50V, ID=8.8A

ns VGS=10V

ns RL=5.7ï

ns RG=10ï

nC VDD 50V, ID=17.5A

nC VGS=10V

nC

ï¬Body diode characteristics (Source-Drain)

Parameter

Forward Voltage

Symbol Min.

VSD *

-

*Pulsed

Typ.

-

Max. Unit

Conditions

1.5

V Is=17.5A, VGS=0V

Data Sheet

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2/6

2011.06 - Rev.A

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