RRR030P03 Datasheet, PDF (2/5 Pages) Rohm – 4V Drive Pch MOSFET

RRR030P03
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
55 75 mΩ ID= −3A, VGS= −10V
85 115 mΩ ID= −1.5A, VGS= −4.5V
95 125 mΩ ID= −1.5A, VGS= −4V
Forward transfer admittance Yfs ^∗ 2.4 −
−
S VDS= −10V, ID= −3A
Input capacitance
Ciss
− 480 −
pF VDS= −10V
Output capacitance
Coss
−
70
−
pF VGS=0V
Reverse transfer capacitance Crss
− 70 − pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) ^∗ −
7
−
ns VDD −15V
tr ^∗ −
18
−
ns ^{ID= −1.5A}
td (off) ^∗ −
50
−
VGS= −10V
ns _{RL 10Ω}
tf ^∗ −
35
−
ns RGS=10Ω
Total gate charge
Qg ^∗ −
5.2
−
nC VDD −15V, ID= −3A
Gate-source charge
Qgs ^∗ −
1.6
−
nC VGS= −5V
Gate-drain charge
Qgd ^∗ −
1.6
−
nC RL 5Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
− −1.2 V IS= −3A, VGS=0V
Data Sheet
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2009.04 - Rev.A