RJK005N03 Datasheet, PDF (2/3 Pages) Rohm – 2.5V Drive Nch MOS FET

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 0.8
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
Forward transfer admittance Yfs ^∗ 0.5
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
tf ^∗ −
Qg ^∗ −
Qgs ^∗ −
Qgd ^∗ −
∗Pulsed
Typ.
−
−
−
−
400
420
650
−
60
24
12
9
11
16
31
2.0
0.6
0.7
Max.
±10
−
1
1.5
580
600
940
−
−
−
−
−
−
−
−
4.0
−
−
Unit
Conditions
µA VGS=±12V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 500mA, VGS= 4.5V
mΩ ID= 500mA, VGS= 4V
mΩ ID= 500mA, VGS= 2.5V
S VDS= 10V, ID= 500mA
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 15V
ns ^{ID= 250mA}
VGS= 4V
ns _RL=60Ω
ns RG=10Ω
nC VDD 24V
nC VGS= 4V
nC ID= 500mA
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
− 1.2 V IS= 500mA, VGS=0V
∗Pulsed
RJK005N03
2/2