|
RHK005N03FRA Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Nch MOS FET | |||
|
◁ |
Transistors
RHKR0H0K50N0053NF0R3A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
â
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
â
Gate threshold voltage
VGS (th) 1.0
â
Static drain-source on-state
resistance
RDS (on)â
â
â
Forward transfer admittance Yfs â 0.5
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance Crss
â
Turn-on delay time
td (on) â â
Rise time
tr â â
Turn-off delay time
td (off) â â
Fall time
tf â â
âPulsed
Typ.
â
â
â
â
350
510
600
â
45
20
10
10
10
15
30
Max.
±10
â
1
2.5
550
720
840
â
â
â
â
â
â
â
â
Unit
Conditions
µA VGS= ±20V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
V VDS= 10V, ID= 1mA
m⦠ID= 500mA, VGS= 10V
m⦠ID= 500mA, VGS= 4.5V
m⦠ID= 500mA, VGS= 4V
S VDS= 10V, ID= 500mA
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 15V
ns
ns
ID= 250mA
VGS= 10V
RL=60â¦
ns RG=10â¦
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD
â
â
1.2
V IS= 0.16A, VGS=0V
2/2
|
▷ |