RHK003N06T146 Datasheet, PDF (2/3 Pages) Rohm – 4V Drive Nch MOS FET

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 60
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 1.0
Static drain-source on-state
resistance
RDS (on)^∗
−
−
Forward transfer admittance Yfs ^∗ 0.2
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
tf ^∗ −
Qg ^∗ −
Qgs ^∗ −
Qgd ^∗ −
Typ.
−
−
−
−
0.7
1.1
−
33
14
9
6
5
13
80
3
0.6
0.5
Max.
±10
−
1
2.5
1.0
1.5
−
−
−
−
−
−
−
−
6
−
−
Unit
Conditions
µA VGS=±20V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 60V, VGS=0V
V VDS= 10V, ID= 1mA
Ω ID= 300mA, VGS= 10V
Ω ID= 300mA, VGS= 4V
S VDS= 10V, ID= 300mA
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 30V
ns ^{ID= 150mA}
VGS= 10V
ns _RL=200Ω
ns RG=10Ω
nC VDD 30V
nC VGS= 10V
nC ID= 300mA
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
− 1.2 V IS= 300mA, VGS=0V
RHK003N06
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