RHK003N06FRA_16 Datasheet, PDF (2/13 Pages) Rohm – Nch 60V 300mA Small Signal MOSFET

RHK003N06FRA
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*2
Values
Unit
Min. Typ. Max.
-
- 625 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
Breakdown voltage
temperature coefficient
　ΔV_(BR)DSS　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Zero gate voltage
drain current
I_DSS V_DS = 60V, V_GS = 0V
Gate - Source leakage current I_GSS V_GS = ±20V, V_DS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
V_GS(th) V_DS = 10V, I_D = 1mA
　ΔV_GS(th) 　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Static drain - source
on - state resistance
R_DS(on)*3 ^{VGS = 10V, ID = 300mA}
V_GS = 4V, I_D = 300mA
Forward Transfer
Admittance
|Y_fs|^*3 V_DS = 10V, I_D = 300mA
Values
Unit
Min. Typ. Max.
60 -
-
V
- 66.1 - mV/℃
-
-
1 μA
-
- ±10 μA
1.0 - 2.5 V
- -3.0 - mV/℃
- 0.7 1.0
Ω
- 1.1 1.5
200 -
- mS
*1 Pw≦10μs , Duty cycle≦1%
*2 Each terminal mounted on a reference land.
*3 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/10
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20160915 - Rev.001