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RHK003N06FRA Datasheet, PDF (2/5 Pages) Rohm – 4V Drive Nch MOS FET | |||
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Transistors
RHKR0H0K30N0036NF0R6A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
â
Drain-source breakdown voltage V(BR) DSS 60
Zero gate voltage drain current IDSS
â
Gate threshold voltage
VGS (th) 1.0
Static drain-source on-state
resistance
RDS (on)â
â
â
Forward transfer admittance Yfs â 0.2
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance Crss
â
Turn-on delay time
td (on) â
â
Rise time
tr â â
Turn-off delay time
td (off) â
â
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
tf â â
Qg â â
Qgs â â
Qgd â â
âPulsed
Typ.
â
â
â
â
0.7
1.1
â
33
14
9
6
5
13
80
3
0.6
0.5
Max.
±10
â
1
2.5
1.0
1.5
â
â
â
â
â
â
â
â
6
â
â
Unit
Conditions
µA VGS=±20V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 60V, VGS=0V
V VDS= 10V, ID= 1mA
⦠ID= 300mA, VGS= 10V
⦠ID= 300mA, VGS= 4V
S VDS= 10V, ID= 300mA
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 30V
ns
ID= 150mA
VGS= 10V
ns RL=200â¦
ns RG=10â¦
nC VDD 30V
nC VGS= 10V
nC ID= 300mA
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD â
â
â
1.2
V IS= 300mA, VGS=0V
âPulsed
2/2
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