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| RGTH60TS65 Datasheet, PDF (2/11 Pages) Rohm – 650V 30A Field Stop Trench IGBT | |||
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RGTH60TS65
ï¬Thermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Values
Unit
Min. Typ. Max.
-
-
0.77 °C/W
ï¬IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES VGE = ï±30V, VCE = 0V
-
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 21.0mA 4.5
IC = 30A, VGE = 15V
VCE(sat) Tj = 25°C
-
Tj = 175°C
-
-
ï±200 nA
5.5
6.5
V
1.6
2.1
V
2.1
-
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© 2015 ROHM Co., Ltd. All rights reserved.
2/9
2015.10 - Rev.C
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