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RGTH00TK65 Datasheet, PDF (2/11 Pages) Rohm – 650V 50A Field Stop Trench IGBT
RGTH00TK65
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Values
Unit
Min. Typ. Max.
-
-
2.07 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
-
200 nA
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 34.7mA 4.5
5.5
6.5
V
Collector - Emitter Saturation
Voltage
IC = 50A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
1.6 2.1
V
-
2.1
-
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2016.01 - Rev.A