RGT40NS65D Datasheet, PDF (2/12 Pages) Rohm – 650V 20A Field Stop Trench IGBT

RGT40NS65D
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
R_θ(j-c)
R_θ(j-c)
Values
Unit
Min. Typ. Max.
-
-
0.93 °C/W
-
-
2.12 °C/W
lIGBT Electrical Characteristics (at T_j = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector - Emitter Breakdown
Voltage
BV_CES I_C = 10μA, V_GE = 0V
650
-
-
V
Collector Cut - off Current
I_CES V_CE = 650V, V_GE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
I_GES V_GE = 30V, V_CE = 0V
-
-
200 nA
Gate - Emitter Threshold
Voltage
V_GE(th) V_CE = 5V, I_C = 13.3mA 5.0
6.0
7.0
V
Collector - Emitter Saturation
Voltage
I_C = 20A, V_GE = 15V
V_CE(sat) T_j = 25°C
T_j = 175°C
-
1.65 2.1
V
-
2.15
-
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2/11
2014.05 - Rev.A