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RFUS20TF6S Datasheet, PDF (2/4 Pages) Rohm – Super Fast Recovery Diode | |||
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RFUS20TF6S
ã
ï¬Electrical characteristic curves
Data Sheet
100
Tj=125ï°C
Tj=150ï°C
10
Tj=25ï°C
Tj=75ï°C
1
0.1
0
1000
2000
3000
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
Tj=150ï°C
Tj=125ï°C
Tj=75ï°C
10
Tj=25ï°C
4000
1
0 50 100 150 200 250 300 350
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
2500
2400
2300
2200
2100
2000
1900
AVE : 2113mV
Tï½=25ï°C
IF=20A
n=20pcs
1000
100
10
1
VF DISPERSION MAP
Tï½=25ï°C
VR=600V
n=20pcs
AVE : 61.8nA
IR DISPERSION MAP
1000
100
10
0
450
445
440
435
430
425
420
415
410
405
400
f=1MHz
Tj=25ï°C
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Ta=25ï°C
f=1MHz
VR=0V
n=10pcs
AVE : 415.9pF
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
40
IFSM
1cyc
35
8.3ms
30
25
20
AVE : 156A
15
10
IFSM DISRESION MAP
15
12
IFSM
time
9
6
3
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
0
100
Tï½=25ï°C
IF=0.5A
IR=1A
Irr=0.25ÃIR
n=10pcs
1000
100
AVE : 26.1ns
trr DISPERSION MAP
10
IFSM
8.3ms 8.3ms
1cyc.
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
Rth(j-c)
AVE : 1.20kV
AVE : 11.0kV
1
C=200pF
R=0ï
C=100pF
R=1.5kï
ESD DISPERSION MAP
0.1
0.001 0.01
0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
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2/3
2011.06 - Rev.A
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