RF6E065BN Datasheet, PDF (2/14 Pages) Rohm – Nch 30V 6.5A Middle Power MOSFET

RF6E065BN
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*2
R_thJA*3
Values
Unit
Min. Typ. Max.
-
- 125 ℃/W
-
- 137 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
Breakdown voltage
temperature coefficient
　^ΔV_(BR)DSS　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Zero gate voltage
drain current
I_DSS V_DS = 30V, V_GS = 0V
Gate - Source leakage current ^I_GSS V_GS = ±20V, V_DS = 0V
Gate threshold voltage
V_GS(th) V_DS = V_GS, I_D = 1mA
Gate threshold voltage
temperature coefficient
　^ΔV_GS(th) 　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Static drain - source
on - state resistance
R_DS(on)*4 ^{VGS = 10V, ID = 6.5A}
V_GS = 4.5V, I_D = 6.5A
Gate resistance
R_{G f = 1MHz, open drain}
Forward Transfer
Admittance
|Y_fs|^*4 V_DS = 5V, I_D = 6.5A
Values
Unit
Min. Typ. Max.
30 -
-
V
-
21
- mV/℃
-
-
1 μA
-
- ±100 nA
1.0 - 2.5 V
-
-3
- mV/℃
- 12.9 15.3
mΩ
- 18.5 22.7
- 3.6 -
Ω
5
-
-
S
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　
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2/11
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20160316 - Rev.000