RF6E045AJ Datasheet, PDF (2/12 Pages) Rohm – High Power Package

RF6E045AJ
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*2
Values
Unit
Min. Typ. Max.
-
- 125 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
Breakdown voltage
temperature coefficient
　^ΔV_(BR)DSS　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Zero gate voltage
drain current
I_DSS V_DS = 30V, V_GS = 0V
Gate - Source leakage current ^I_GSS V_GS = ±12V, V_DS = 0V
Gate threshold voltage
V_GS(th) V_DS = V_GS, I_D = 1mA
Gate threshold voltage
temperature coefficient
　^ΔV_GS(th) 　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Static drain - source
on - state resistance
R_DS(on)*3 ^{VGS = 4.5V, ID = 4.5A}
V_GS = 2.5V, I_D = 4.5A
Gate input resistance
R_{G f=1MHz, open drain}
Forward Transfer
Admittance
|Y_fs|^*3 V_DS = 5V, I_D = 4.5A
Values
Unit
Min. Typ. Max.
30 -
-
V
-
18
- mV/℃
-
-
1 μA
-
- ±100 nA
0.5 - 1.5 V
-
-2
- mV/℃
- 16.9 23.7
mΩ
- 23.9 33.5
- 2.7 -
Ω
6
-
-
S
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic boad (30×30×0.8mm)
*3 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20150403 - Rev.002