RF6C055BC Datasheet, PDF (2/14 Pages) Rohm – Pch -20V -5.5A Middle Power MOSFET

RF6C055BC
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*3
R_thJA*4
Values
Unit
Min. Typ. Max.
-
- 125 ℃/W
-
- 137 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = -1mA
Breakdown voltage
temperature coefficient
　^ΔV_(BR)DSS　 I_D = -1mA
　　 ΔT_j 　 　 referenced to 25℃
Zero gate voltage
drain current
I_DSS V_DS = -20V, V_GS = 0V
Gate - Source leakage current ^I_GSS V_GS = ±8V, V_DS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
V_GS(th) V_DS = V_GS, I_D = -1mA
　^ΔV_GS(th) 　 I_D = -1mA
　　 ΔT_j 　 　 referenced to 25℃
Static drain - source
on - state resistance
V_GS = -4.5V, I_D = -5.5A
R_DS(on)*5 V_GS = -2.5V, I_D = -5.5A
V_GS = -1.8V, I_D = -1.4A
Gate resistance
R_{G f = 1MHz, open drain}
Forward Transfer
Admittance
|Y_fs|^*5 V_DS = -5V, I_D = -5.5A
Values
Unit
Min. Typ. Max.
-20 -
-
V
- -10.3 - mV/℃
-
- -1 μA
-
- ±100 nA
-0.5 - -1.2 V
- 1.7 - mV/℃
- 19.5 25.8
- 24.8 33.1 mΩ
- 33.7 63.6
-
11 -
Ω
7
-
-
S
*1 Vgs≧2.5V
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 Mounted on a ceramic boad (30×30×0.8mm)
*4 Mounted on a FR4 (25×25×0.8mm)
*5 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　
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2/11
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20160314 - Rev.002