RF601T2D_10 Datasheet, PDF (2/4 Pages) Rohm – Fast recovery diode

RF601T2D
　
Electrical characteristics curves
Data Sheet
10
10000
Ta=150C
1
Ta=125C
1000
0.1
Ta=75C
0.01
100
Ta=25C
10
Ta=-25C
1
0.001
0 100 200 300 400 500 600 700 800 900 100
0
0.1
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
890
100
Ta=25C
90
IF=3A
880
n=30pcs
80
70
870
60
50
860
40
30
AVE:859.4mV
850
20
10
840
0
VF DISPERSION MAP
100
Ta=150C
Ta=125C
f=1MHz
Ta=75C
Ta=25C
Ta=-25C
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Ta=25C
VR=200V
n=30pcs
AVE:4.60nA
IR DISPERSION MAP
10
1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
150
140
Ta=25C
f=1MHz
130
VR=0V
120
n=10pcs
110
100
90
AVE:99.4pF
80
70
60
50
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
30
Ifsm
1cyc
25
8.3ms
20
15
10
AVE:126.0A
5
0
IFSM DISPERSION MAP
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1000
100
AVE:13.7ns
10
Ifsm
8.3ms 8.3ms
1cyc
trr DISPERSION MAP
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Ifsm
t
100
Mounted on epoxy board
IM=100mA
IF=3A
10
1ms time
300us
Rth(j-a)
1
Rth(j-c)
10
8
D=1/2
DC
6
Sin(=180)
4
2
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
100
0.001 0.01 0.1
1
10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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2010.02 - Rev.C