English
Language : 

RB558W_11 Datasheet, PDF (2/4 Pages) Rohm – Shottky barrier diode
◁
RB558W
Data Sheet
1000
100 Ta=125℃
Ta=75℃
10
10000
1000
100
1
Ta=-25℃
10
0.1
Ta=25℃
1
0.01
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
100
Ta=125℃
Ta=75℃
Ta=25℃
10
Ta=-25℃
f=1MHｚ
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
Ta=25℃
IF=10mA
290
n=30pcs
280
270
260
AVE:270.2mV
250
VF DISPERSION MAP
30
Ta=25℃
25
VR=10V
n=30pcs
20
15
10
5
AVE:2.017uA
0
IR DISPERSION MAP
20
19
Ta=25℃
f=1MHz
18
VR=0V
17
n=10pcs
16
15
14
13
12
11
AVE:17.34pF
10
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
AVE:3.90A
5
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
100
10
1
0.001
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
1ms time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.1
Per diode
0.08
D=1/2
0.06
Sin(θ＝180)
DC
0.04
0.02
0
0
0.1
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.1
Per diode
0.08
0.06
0.04
D=1/2
DC
0.02 Sin(θ＝180)
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.B
 ▷