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RB548W_11 Datasheet, PDF (2/4 Pages) Rohm – Shottky barrier diode | |||
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RB548W
Data Sheet
1000
100
Ta=125â
Ta=75â
10
1
Ta=-25â
0.1
Ta=25â
0.01
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
100
10
1
0
Ta=125â
Ta=75â
Ta=25â
Ta=-25â
10
20
30
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
100
f=1MHï½
10
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
370
1000
Ta=25â
IF=10mA
900
360
n=30pcs
800
700
350
600
500
340
400
300
330
200
AVE:338.8mV
100
320
0
20
Ta=25â
19
VR=10V
n=30pcs
18
17
16
15
14
AVE:100.5nA
13
12
11
10
Ta=25â
f=1MHz
VR=0V
n=10pcs
AVE:15.94pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
AVE:3.90A
5
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
0
1
10
100
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=10mA
10
0.001
1ms time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.1
0.08
DC
D=1/2
0.06
Sin(θï¼180)
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
0.02
0.015
0.01
0.005
0
0
D=1/2
DC
Sin(θï¼180)
5
10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.C
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