English
Language : 

RB520CS-30T2R Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode
RB520CS-30
 
Data Sheet
1000
100 Ta=125C
Ta=75C
10
1
Ta=-25C
0.1
Ta=25C
0.01
0.001
0 100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
100
10
1
0
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
10
20
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100
10
1
0
f=1MHz
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
370
1000
360
Ta=25C
IF=10mA
900
n=30pcs
800
700
350
600
500
340
400
300
330
200
AVE:338 : 8mV
100
320
0
20
Ta=25C
19
VR=10V
18
n=30pcs
17
16
15
14
AVE : 100.5nA
13
12
11
10
VF DISPERSION MAP
IR DISPERSION MAP
Ta25C
f1MHz
VR0V
n10pcs
AVE : 15.94pF
Ct DISPERSION MAP
20
10
Ifsm
1cyc
15
8.3ms
10
5
AVE : 3.90A
5
10
Ifsm
8.3ms 8.3ms
1cyc
5
Ifsm
t
0
IFSM DISRESION MAP
0
0
1
10
100
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
TIME : t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
1ms time
300us
10
0.001 0.01 0.1
1
10 100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
0.1
0.08
D1/2
0.06
Sin(=180)
DC
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
0.02
0.015
0.01
0.005
0
0
DC
Sin(=180)
D1/2
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.D