RB520CS-30 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB520CS-30
zElectrical characteristic curves (Ta=25°C)
1000
100
Ta=125℃
Ta=75℃
10
1000000
100000
10000
Ta=125℃
Ta=75℃
1
Ta=-25℃
1000
Ta=25℃
0.1
Ta=25℃
100
Ta=-25℃
0.01
10
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHｚ
10
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
370
1000
Ta=25℃
IF=10mA
900
360
n=30pcs
800
700
350
600
500
340
400
300
330
200
AVE:338.8mV
100
320
0
20
Ta=25℃
19
VR=10V
18
n=30pcs
17
16
15
14
AVE:100.5nA
13
12
11
10
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:15.94pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
AVE:3.90A
5
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
0
1
10
100
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
10
0.001
1ms ^time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.1
0.08
D=1/2
0.06
DC
Sin(θ＝180)
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.02
0.015
0.01
0.005
0
0
DC
Sin(θ＝180)
D=1/2
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
Rev.B
2/3