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| RB500V-40TE-17 Datasheet, PDF (2/4 Pages) Rohm – Shottky barrier diode | |||
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Diodes
zElectrical characteristic curves (Ta=25°C)
100
Ta=125â
10 Ta=75â
1
0.1
Ta=25â
Ta=-25â
0.01
0 100 200 300 400 500 600 700 800
VF(mV)
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
100
Ta=125â
10
Ta=75â
1
Ta=25â
0.1
Ta=-25â
0.01
0.001
0
10 VR(V) 20
30
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
400
Ta=25â
390
IF=10mA
n=30pcs
380
370
360
AVE:370.2mV
350
VF DISPERSION MAP
1000
900
800
700
600
500
400
300
200
100
0
Ta=25â
VR=10V
n=30pcs
AVE:88.62nA
IR DISPERSION MAP
RB500V-40
100
f=1MHz
10
1
0
10
20
30
VR(V)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
18
Ta=25â
16
f=1MHz
14
VR=10V
n=10pcs
12
10
8
6
4
2
AVE:5.81pF
0
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.5A
0
IFSM DISRESION MAP
15
15
Ifsm
8.3ms 8.3ms
10
1cyc
10
5
5
Ifsm
t
0
0.1
1 cycle 10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
0.1
1 t(ms) 10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
100
10
1
0.001
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100mA
1ms time
300us
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
DC
0.08
D=1/2
0.06
Sin(θï¼180)
0.04
0.02
0.003
0.002
0.001
D=1/2
DC
Sin(θï¼180)
0
0
0.1
0.2
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.A
2/3
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