RB496KA Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves
1000
100000
Ta=125℃
Ta=75℃
100
Ta=25℃
Ta=-25℃
10000
1000
100
10
1
10
0 100 200 300 400 500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5
10
15
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
RB496KA
1000
100
f=1MHｚ
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
370
410
Ta=25℃
360
VF=0.7A
400
n=30pcs
350
390
340
380
AVE:349.5mV
330
370
320
360
VF DISPERSION MAP
Ta=25℃
VF=1A
n=30pcs
AVE:382.9mV
1000
900
800
700
600
500
400
300
200
100
0
Ta=25℃
VR=10V
n=30pcs
AVE:76.67uA
IR DISPERSION MAP
200
190
Ta=25℃
f=1MHz
180
VR=0V
170
n=10pcs
160
150
140
AVE:154.7pF
130
120
110
100
Ct DISPERSION MAP
30
25
Ifsm
8.3ms
20
1cyc
15
AVE:14.7A
10
5
0
IFSM DISRESION MAP
20
Ifsm
8.3ms 8.3ms
15
1cyc
10
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
25
Ifsm
t
20
15
10
5
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10000
1000
100
Mounted on epoxy board
IM=10mA
IF=50mA
1ms time
300us
10
Rth(j-a)
Rth(j-c)
1
0.001
0.01 0.1 1 10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Sin(θ＝180)
D=1/2
DC
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3