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RB491D_15 Datasheet, PDF (2/7 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – Schottky barrier Diodes | |||
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RB491D
Data Sheet
1
Ta=75â
Ta=125â
0.1
Ta=25â
100000
10000
1000
Ta=-25â
100
0.01
10
1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
0.1
0
1000
Ta=125â
Ta=75â
100
Ta=25â
10
Ta=-25â
f=1MHz
5
10
15
20
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
420
500
Ta=25â
450
IF=1A
410
n=30pcs
400
350
300
400
250
200
150
390
100
AVE:399.2m
50
380
0
200
Ta=25â
VR=20V
190
n=30pcs
180
170
160
150
140
130
AVE:37.93uA
120
110
100
Ta=25â
f=1MHz
VR=0V
n=10pcs
AVE:159.8pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
20
Ifsm
1cyc
15
20
8.3ms
10
20
Ta=25â
IF=0.5A
IR=1A
15
Irr=0.25*IR
n=10pcs
10
Ifsm
8.3ms 8.3ms
1cyc
10
AVE:11.1A
0
IFSM DISRESION MAP
5
AVE:9.3ns
0
trr DISPERSION MAP
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
15
10
5
0
1
Ifsm
t
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
100
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
10
IM=1mA
IF=10mA
1
0.001
1ms time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
1
Per chip
DC
D=1/2
0.5
Sin(θï¼180)
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.03 - Rev.D
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