RB481Y-90 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB481Y-90
zElectrical characteristic curves
100
Ta=75℃
Ta=125℃
10
1
Ta=25℃
Ta=-25℃
10000
1000
100
10
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.1
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
580
500
Ta=25℃
450
IF=0.1A
570
n=30pcs
400
350
560
300
250
550
200
150
540
100
AVE:552.0mV
50
530
0
30
Ta=25℃
VR=90V
29
n=30pcs
28
27
26
25
24
23
AVE:29.31uA
22
21
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:21.69pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
30
Ifsm
1cyc
25
15
8.3ms
20
10
Ta=25℃
9
IF=0.5A
IR=1A
8
Irr=0.25*IR
7
n=10pcs
6
Ifsm
8.3ms 8.3ms
1cyc
10
15
5
5
AVE:3.70A
0
IFSM DISRESION MAP
10
AVE:11.7ns
5
0
trr DISPERSION MAP
4
3
2
1
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
1
Ifsm
t
10
TIME:t(s)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
1ms ^time
300us
10
100
0.001
0.1
10
TIME:t(s)
1000
Rth-t CHARACTERISTICS
0.2
Per diode
D=1/2
0.1 ^{Sin(θ＝180)}
DC
0
0 0.05 0.1 0.15 0.2 0.25 0.3
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3