RB480Y Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves (Ta=25°C)
1000
100
10
1
0.1
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.01
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
100
10
1
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
RB480Y
100
f=1MHｚ
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
450
Ta=2^T5^a=℃^25℃
VF=100mA
440
IF=10n0=m30pAcs
n=30pcs
430
420
410
AVE:426.3mV
σ:0.9486mV
AVE:430.7mV
400
VF DISPERSION MAP
1000
900
800
700
600
500
400
300
200
100
0
Ta=25℃
VR=10V
n=30pcs
AVE:100.5nA
IR DISPERSION MAP
50
Ta=25℃
40
f=1MHz
VR=0V
n=10pcs
30
20
10
AVE:28.2pF
0
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.60A
0
IFSM DISRESION MAP
10
10
Ifsm
8.3ms 8.3ms
1cyc
5
5
Ifsm
t
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10000 ^{Mounted on epoxy board}
IM=10mA
IF=100mA
1000
1ms ^time
300us
Rth(j-a)
100
Rth(j-c)
0.3
Per chip
0.2
Sin(θ＝180)
D=1/2
DC
0.1
0.01
0.008
Per chip
0.006
0.004
0.002
DC
D=1/2
Sin(θ＝180)
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.1
0.2
0.3
0.4
0.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
Rev.B
2/3