RB480Y-90 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves
RB480Y-90
100
Ta=75℃
10
Ta=125℃
1
Ta=25℃
Ta=-25℃
0.1
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1000
100
10
Ta=125℃
Ta=75℃
1
Ta=25℃
0.1
0.01
Ta=-25℃
0.001
0.0001
0
10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
670
Ta=25℃
IF=0.1A
660
n=30pcs
650
640
630
AVE:641.7mV
620
VF DISPERSION MAP
5
30
4.5
Ta=25℃
29
4
VR=90V
28
n=30pcs
3.5
27
3
26
2.5
25
2
24
1.5
23
1
AVE:0.286uA
22
0.5
21
0
20
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:21.60pF
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:3.70A
0
IFSM DISRESION MAP
10
9
8
7
6
5
4
3
2
1
0
1
Ifsm
8.3ms 8.3ms
1cyc
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
9
8
Ifsm
t
7
6
5
4
3
2
1
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
10
0.001
1ms time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.2
Per diode
D=1/2 DC
0.1 ^{Sin(θ＝180)}
0.03
Per diode
0.02
D=1/2
0.01
DC
Sin(θ＝180)
0
0 0.05 0.1 0.15 0.2 0.25 0.3
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0
0
20
40
60
80
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
Rev.B
2/3