RB411VA-50_12 Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode

RB411VA-50
DataSheet
1000
100
Ta=25℃
Ta=75℃
Ta=125℃
10
1
Ta=-25℃
10000
1000
100
10
1
0.1
0
100
200
300
400
500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
Ta=125℃
100
Ta=75℃
Ta=25℃
10
Ta=-25℃
1
10
20
30
40
50
0
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
460
240
Ta=25℃
IF=500mA
450
n=30pcs
230
440
220
430
210
420
AVE:405.6mV
σ:3.0258mV
200
AVE:432.1mV
410
190
100
Ta=25℃
90
IF=10mA
n=30pcs
80
70
60
50
40
30
20
AVE:213.2mV
10
0
VF DISPERSION MAP
VF DISPERSION MAP
f=1MHz
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=10V
n=30pcs
AVE:5.76uA
IR DISPERSION MAP
25
20
24
Ta=25℃
f=1MHz
23
VR=10V
15
22
n=10pcs
21
20
10
19
18
5
17
AVE:19.41pF
16
15
0
30
Ifsm
1cyc
25
8.3ms
20
15
10
AVE:6.30A
5
0
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:6.20ns
Ct DISPERSION MAP
IFSM DISRESION MAP
trr DISPERSION MAP
10
Ifsm
8.3ms 8.3ms
1cyc
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
15
Ifsm
t
10
5
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
100
10
1
1000
0.001
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=100mA
1ms time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
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2011.03 - Rev.C