RB162VA-20TR Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier Diode

RB162VA-20
　
Electrical characteristics curves
10
Ta=125C
1
Ta=75C
0.1
0.01
Ta=25C
Ta=-25C
0.001
0.0
0.1
0.2
0.3
0.4
0.5
FORWARD VOLTAGE : V_F(V)
V_F-I_F CHARACTERISTICS
100000
10000
Ta=125C
1000
Ta=75C
100
10
1
0
Ta=25C
Ta=-25C
10
20
REVERSE VOLTAGE : VR(V)
V_R-I_R CHARACTERISTICS
400
450
Ta=25C
Ta=25C
380
V_F=1.0A
n=30pcs
400
V_R=20V
n=30pcs
360
350
340
320
AVE : 371mV
300
V_F DISPERSION MAP
300
AVE : 354A
250
I_R DISPERSION MAP
Data Sheet
1000
100
f=1MHz
10
1
0
5
10
15
20
REVERSE VOLTAGE : VR(V)
V_R-Ct CHARACTERISTICS
180
178
Ta=25C
f=1MHz
176
V_R=0V
174
n=30pcs
172
170
168
166
164
162
AVE:172pF
160
Ct DISPERSION MAP
30
25
20
15
10
5
0
30
25
20
15
10
5
0
1
30
Ifsm
1cyc
25
8.3ms
20
15
10
5
AVE : 14.6A
0
I_FSM DISRESION MAP
Ta=25C
I_F=0.5A
I_R=1A
Irr=0.25*I_R
n=10pcs
AVE : 7.70ns
trr DISPERSION MAP
Ifsm
t
1000
100
On glass-epoxy board
IM=10mA
IF=0.1A
1ms time
300s
Rth(j-a)
Rth(j-c)
30
25
20
15
10
5
0
1
0.3
Ifsm
8.3ms 8.3ms
1cyc
10
100
NUMBER OF CYCLES
I_FSM-CYCLE CHARACTERISTICS
0.2
D=1/2
DC
Sin(=180)
0.1
10
10
100
0.001 0.01 0.1
1
10 100 1000
TIME : t(ms)
I_FSM-t CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
0
0
0.1
0.2
0.3
0.4
0.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2011.04 - Rev.A