 English |
|
|
|
|
|
|
|
| RB160A90 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode | |||
| |||
| ◁ |
Diodes
RB160A90
zElectrical characteristic curves (Ta=25°C)
1
Ta=75â
Ta=125â
0.1
Ta=150â
Ta=25â
Ta=-25â
10000
1000
100
10
Ta=150â Ta=125â
Ta=75â
Ta=25â
0.01
1
Ta=-25â
0.1
0.001
0
100 200 300 400 500 600 700
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60 70 80 90
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
1000
100
æ¡ä»¶f=ï¼1f=M1MHHzz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
650
100
Ta=25â
IF=1A
90
640
n=30pcs
80
70
630
60
50
620
40
30
610
AVE:632.1mV
20
10
0
600
VF DISPERSION MAP
200
Ta=25â
190
Ta=25â
VRV=R9=100V0V
180
n=3n=03p0pccss
170
160
150
140
AVE:478.3nA
Ï:36.1612nA
130
AVE:4.655uA
120
110
100
IR DISPERSION MAP
Ta=25â
f=1MHz
VR=0V
n=10pcs
AVE:149.6pF
Ct DISPERSION MAP
200
150
100
50
0
150
100
50
Ifsm
1cyc
8.3ms
AVE:56.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25â
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
AVE:7.40ns
10
5
0
trr DISPERSION MAP
1000
Mounted on epoxy board
IF=0.5A
IM=1mA time(ms)
100
td=300us
Rth(j-l) Rth(j-a)
Rth(j-c)
10
100
Ifsm
8.3ms 8.3ms
1cyc
50
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2
1.5
1
Sin(θï¼180)
0.5
DC
D=1/2
0
1
0
0.1
1
10
100
0.001 0.01
0.1
1
10
100 1000
TIME:t(ms)
TIME:t(s)
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
Rev.D
2/3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese