RB095T-90 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves
10
100000
Ta=150℃ Ta=125℃
Ta= 1 5 0 ℃
1
Ta= 1 2 5 ℃
Ta= 7 5 ℃
0.1
Ta= 2 5 ℃
Ta= - 2 5 ℃
10000
1000
100
10
1
Ta= 7 5 ℃
Ta= 2 5 ℃
Ta= - 2 5 ℃
0.1
0.01
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
750
200
Ta= 2 5 ℃
180
IF= 1 0 A
740
160
n = 3 0 pc s
140
Ta= 2 5 ℃
VR=90V
n = 3 0 pc s
730
120
100
720
80
710
AVE:715.7mV
700
60
AVE:13.7uA
40
20
0
VF DISPERSION MAP
IR DISPERSION MAP
RB095T-90
1000
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
390
Ta= 2 5 ℃
f=1MHz
380
VR=0V
370
n = 1 0 pc s
360
350
340
330
320
310
A V E:3 5 7 .9 pF
300
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
Ifsm
1 c yc
8.3ms
AVE:225.0A
IFSM DISRESION MAP
Ifsm
t
10
100
TIM E:t( m s)
IFSM-t CHARACTERISTICS
30
1000
Ta= 2 5 ℃
25
IF= 0 .5 A
IR = 1 A
Irr= 0 .2 5 * IR
20
n = 1 0 pc s
Ifsm
8.3ms 8.3ms
1 c yc
15
100
10
5
AVE:8.30ns
0
trr DISPERSION MAP
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
IM=100mA
IF=6A
1ms ^time
10
300us
1
R th ( j- a)
R th ( j- c )
0.1
0.001
0.1
10
TIM E:t( s)
Rth-t CHARACTERISTICS
1000
10
8
DC
D=1/2
6
Sin ( θ ＝ 1 8 0 )
4
2
0
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3