RB070M-30_1 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB070M-30
zElectrical characteristic curves
10
Ta=75℃
Ta=125℃
1
Ta=150℃
0.1
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
0.01
1
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
f=1MHz
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
470
200
Ta=25℃
180
IF=1.5A
460
n=30pcs
160
140
450
120
100
440
80
60
430
AVE:441.5mV
40
20
420
0
VF DISPERSION MAP
400
Ta=25℃
390
VR=30V
n=30pcs
380
370
360
350
340
330
AVE:8.828uA
320
310
300
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:332.6pF
Ct DISPERSION MAP
150
20
Ifsm
1cyc
8.3ms
15
100
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
10
50
AVE:96.0A
50
0
IFSM DISRESION MAP
AVE:9.30ns
5
0
trr DISPERSION MAP
Ifsm
8.3ms 8.3ms
1cyc
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
150
1000 IM=10mA
IF=0.5A
2
Ifs
t
100
1ms ^time
Rth(j-a)
1.5
100
300us
D=1/2
DC
10
Rth(j-c)
1 _{Sin(θ＝180)}
50
1
0.5
0
0.1
0
1
10
TIME:t(ms)
100
0.001 0.01 0.1
1
10 100 1000
0
1
2
3
TIME:t(s)
AVERAGE RECTIFIED
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3