QS8J5 Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Pch + Pch MOSFET

QS8J5
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
I_GSS
V_(BR)DSS
I_DSS
V_{GS (th)}
Static drain-source on-state
resistance
R_DS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Y_fs l*
C_iss
C_oss
C_rss
t_d(on)*
t_r *
t_d(off)*
t_f *
Q_g *
Q_gs *
Q_gd *
Min.
-
30
-
1.0
-
-
-
3
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
28
40
45
-
1100
150
130
9
40
90
55
10.0
3.6
3.0
Max.
10
-
1
2.5
39
56
63
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=20V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=30V, V_GS=0V
V V_DS=10V, I_D=1mA
I_D=5A, V_GS=10V
m I_D=2.5A, V_GS=4.5V
I_D=2.5A, V_GS=V
S I_D=5A, V_DS=10V
pF V_DS=10V
pF V_GS=0V
pF f=1MHz
ns I_D=2.5A, V_DD 15V
ns V_GS=10V
ns R_L 6
ns R_G=10
nC I_D=5A, V_DD 15V
nC V_GS=5V
nC R_L 3,R_G=10
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min.
V_SD ^*
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2
V I_s=5A, V_GS=0V
Data Sheet
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2010.01 - Rev.A