QS5U36 Datasheet, PDF (2/6 Pages) Rohm – 1.5V Drive Nch+SBD MOSFET

Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP ^∗1
Source current
(Body diode)
Continuous
Pulsed
IS
ISP ^∗1
Channel temperature
Tch
Power dissipation
PD ^∗3
Limits
20
±10
±2.5
±5.0
0.7
5.0
150
0.9
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
25
VR
20
IF
0.7
IFSM ^∗2
3.0
Tj
150
PD ^∗3
0.7
<MOSFET AND Di>
Total power dissipation
PD ^∗3
1.25
Range of storage temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
Unit
V
V
A
A
A
A
°C
W/ELEMENT
V
V
A
A
°C
W/ELEMENT
W / TOTAL
°C
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 20
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 0.3
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
Forward transfer admittance
Input capacitance
−
Yfs ^∗ 2.7
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
tf ^∗ −
Total gate charge
Qg ^∗ −
Gate-source charge
Qgs ^∗ −
Gate-drain charge
Qgd ^∗ −
∗Pulsed
Typ.
−
−
−
−
58
74
95
120
−
280
65
35
6
15
30
15
3.5
0.8
0.7
Max.
±10
−
1
1.3
81
104
133
240
−
−
−
−
−
−
−
−
−
−
−
Unit
Conditions
µA VGS=±10V / VDS=0V
V ID=1mA, / VGS=0V
µA VDS=20V / VGS=0V
V VDS=10V / ID=1mA
mΩ ID=2.5A, VGS=4.5V
mΩ ID=2.5A, VGS=2.5V
mΩ ID=1.3A, VGS=1.8V
mΩ ID=0.5A, VGS=1.5V
S VDS=10V, ID=2.5A
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=1.3A
ns ^{VDD 10V}
VGS=4.5V
ns _{RL 7.7Ω}
ns RG=10Ω
nC ID=2.5A, VDD 10V
nC VGS=4.5V
nC RL 4Ω, RG=10Ω
<MOSFET>Body diode (source-drain)
Forward voltage
VSD ^∗ −
∗Pulsed
− 1.2 V IS=0.7A / VGS=0V
<Di>
Forward voltage
Reverse current
VF
−
− 0.49 V IF=0.7A
IR
−
− 200 µA VR=20V
QS5U36
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