QS5U17 Datasheet, PDF (2/5 Pages) Rohm – Small switching (30V, 2.0A)

Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
ID
Pulsed
IDP
Source current
(Body diode)
Continuous
IS
Pulsed
ISP
Channel temperature
Tch
<Di>
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Forward current
IF
Forward current surge peak
IFSM
Junction temperature
Tj
<MOSFET AND Di>
Total power dissipation
PD
Range of Storage temperature
Tstg
Limits
30
12
±2.0
±8.0
0.8
3.2
150
Unit
V
V
A
A Pw≤10µs, Duty cycle≤1%
A
A Pw≤10µs, Duty cycle≤1%
°C
25
V
20
V
1.0
A
3.0
A
125
°C
60Hz ⋅ 1cyc.
1.0
−40 to 125
W / Total / Mounted on a ceramic board
°C
QS5U17
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V / VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
−
−
V ID=1mA, / VGS=0V
Zero gate voltage drain current IDSS
−
−
1
µA VDS=30V / VGS=0V
Gate threshold voltage
VGS (th) 0.5
−
1.5
V VDS=10V / ID=1mA
Static drain-source on-state
resistance
−
RDS (on)^∗ −
−
71 100 mΩ ID=2.0A, VGS=4.5V
76 107 mΩ ID=2.0A, VGS=4V
110 154 mΩ ID=2.0A, VGS=2.5V
Forward transfer admittance
Yfs ^∗ 1.5
−
−
S VDS=10V, ID=2.0A
Input capacitance
Ciss
− 175 −
pF VDS=10V
Output capacitance
Coss
−
50
−
pF VGS=0V
Reverse transfer capacitance Crss
− 25 − pF f=1MHz
Turn-on delay time
td (on) ^∗ −
8
−
ns ID=1.0A
Rise time
Turn-off delay time
Fall time
tr ^∗ −
td (off) ^∗ −
10
21
−
−
ns ^{VDD 15V}
ns
VGS=4.5V
RL=15Ω
tf ^∗ −
8
−
ns RGS=10Ω
Total gate charge
Qg
− 2.8 3.9 nC VDD 15V
Gate-source charge
Qgs
− 0.6 − nC VGS=4.5V
Gate-drain charge
Qgd
− 0.8 − nC ID=2.0A
∗Pulsed
<MOSFET>Body diode (source-drain)
Forward voltage
VSD −
− 1.2 V IS=3.2A / VGS=0V
<Di>
Forward voltage
Reverse leakage
VF
−
− 0.45 V IF=1.0A
IR
−
− 200 µA VR=20V
Rev.A
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