PXL035N03 Datasheet, PDF (2/14 Pages) Rohm – Nch 30V 3.5A Small Signal MOSFET

RXL035N03
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*2
R_thJA*3
Values
Unit
Min. Typ. Max.
-
- 125 ℃/W
-
- 137 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
Breakdown voltage
temperature coefficient
　^ΔV_(BR)DSS　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Zero gate voltage
drain current
I_DSS V_DS = 30V, V_GS = 0V
Gate - Source leakage current ^I_GSS V_GS = ±20V, V_DS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
V_GS(th) V_DS = 10V, I_D = 1mA
　^ΔV_GS(th) 　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Static drain - source
on - state resistance
V_GS = 10V, I_D = 3.5A
R_DS(on)*4 V_GS = 4.5V, I_D = 3.5A
V_GS = 4.0V, I_D = 3.5A
Gate resistance
R_{G f = 1MHz, open drain}
Forward Transfer
Admittance
|Y_fs|^*4 V_DS = 10V, I_D = 3.5A
Values
Unit
Min. Typ. Max.
30 -
-
V
- 34.15 - mV/℃
-
-
1 μA
-
- ±10 μA
1.0 - 2.5 V
- -2.34 - mV/℃
- 35 50
- 45 65 mΩ
- 50 70
- 2.0 -
Ω
2.2 -
-
S
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm,Cu pad:625mm²)
*4 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　
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2/11
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20160715 - Rev.001