FMY5 Datasheet, PDF (2/5 Pages) Rohm – General purpose (dual transistors)

Transistor
FMY5
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
120
−
−
V IC = 50/−50µA
Collector-emitter breakdown voltage
BVCEO
120
−
−
V IC = 1/−1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V IE = 50/−50µA
Collector cutoff current
ICBO
−
−
0.5
µA VCB = 100/−100V
Emitter cutoff curren
IEBO
−
−
0.5
µA VEB = 4/−4V
DC current transfer ratio
hFE
180
−
820
−
VCE = 6/−6V, IC = 2/−2mA
Collector-emitter saturation voltage
VCE(sat)
−
−
0.5
V IC = 10/−10mA, IB = 1/−1mA
Transition frequency
fT
−
140
−
MHz VCE = 12/−12V, IE = −2/2mA, f = 100MHz ∗
Output capacitance
Cob
−
3/4
−
pF VCB = 12/−12V, IE = 0A, f = 1MHz
Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted. ∗Transition frequency of the device.
z Electrical characteristics curves
Tr1
−10
Ta=25°C
−8
−25.0
−22.5
−20.0
−17.5
−6
−15.0
−12.5
−4
−10.0
−7.5
−2
−5.0
−2.5µA
IB=0
0
−4
−8
−12 −16 −20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−50
Ta=25°C
VCE= −6V
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=25°C
500
200
−5V
VCE= −1V
100
50
−0.2 −0.5 −1 −2
−5 −10 −20 −50
COLLECTOR CURRENT : IC (mA)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation
characteristics
Fig.3 DC current gain vs. collector current
Ta=25°C
−0.5
Ta=25°C
VCE= −6V
500
−0.2
−0.1
IC/IB=50/1
20/1
−0.05
−0.2
10/1
−0.5 −1 −2
−5 −10 −20 −50
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter saturation voltage
vs. collector current
200
100
50
0.5 1 2
5 10 20
50
EMITTER CURRENT : IE (mA)
Fig.5 Transition frequency
vs. emitter current
20
Ta=25°C
f=1MHZ
IE=0A
10
Cob
5
2
1
−0.5 −1 −2
−5 −10 −20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Rev.B
2/4